A low field technique for measuring magnetic and magneto-resistance anisotropy coefficients applied to (Ga,Mn)As
| Autor: | K. W. Edmonds, C. T. Foxon, C. S. King, A. W. Rushforth, B. L. Gallagher, J. A. Haigh, R. P. Campion |
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| Rok vydání: | 2009 |
| Předmět: |
Condensed Matter - Materials Science
Materials science Condensed Matter - Mesoscale and Nanoscale Physics Physics and Astronomy (miscellaneous) Magnetic domain Condensed matter physics Magnetoresistance Materials Science (cond-mat.mtrl-sci) FOS: Physical sciences Magnetic susceptibility Magnetization Paramagnetism Magnetic anisotropy Condensed Matter::Materials Science Exchange bias Magnetic shape-memory alloy Mesoscale and Nanoscale Physics (cond-mat.mes-hall) Condensed Matter::Strongly Correlated Electrons |
| DOI: | 10.48550/arxiv.0908.3960 |
| Popis: | We demonstrate a simple, low cost, magneto-transport method for rapidly characterizing the magnetic anisotropy and anisotropic magneto-resistance (AMR) of ferromagnetic devices with uniaxial magnetic anisotropy. This transport technique is the analogue of magnetic susceptibility measurements of bulk material but is applicable to very small samples with low total moment. The technique is used to characterize devices fabricated from the dilute magnetic semiconductor (Ga,Mn)As. The technique allows us to probe the behavior of the parameters close to the Curie temperature, in the limit of the applied magnetic field tending to zero. This avoids the complications arising from the presence of paramagnetism. |
| Databáze: | OpenAIRE |
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