Comparison of Digital to Analog Converters in 0.20μm SOI and 0.13μm CMOS Process

Autor:	G. S. Varner, L. L. Ruckman, Michael J. Cooney
Rok vydání:	2012
Předmět:	Materials science Fabrication Pixel CMOS Detector Hardware_INTEGRATEDCIRCUITS Electronic engineering Silicon on insulator Biasing Hardware_PERFORMANCEANDRELIABILITY Physics and Astronomy(all) Converters Sensitivity (electronics)
Zdroj:	Physics Procedia. 37:1715-1719
ISSN:	1875-3892
DOI:	10.1016/j.phpro.2012.02.496
Popis:	Biasing and threshold adjustments are crucial for the correct operation and sensitivity of 3T based pixel detectors. The latest generation of pixel detectors detectors designed at the University of Hawaii (UH) have adjustable triggering thresholds by including on chip 8-bit R-2R Digital to Analog Converters (DAC). The DAC is the first designed at UH to be manufactured in a 0.20 μm SOI CMOS technology. The DAC has additionally been fabricated in a 0.13 μm CMOS technology. The inclusion of such structure allows comparison between fabrication runs as well as fabrication technologies. Simulations and preliminary results are included, as well as comparisons between fabrication technologies.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::424699f49ba3e065f55b905df7152292 https://doi.org/10.1016/j.phpro.2012.02.496 Zobrazit plný text záznamu