Ambipolar all-polymer bulk heterojunction field-effect transistors
| Autor: | Antonio Facchetti, Dorota Jarzab, Krisztina Szendrei, Zhihua Chen, Maria Antonietta Loi |
|---|---|
| Přispěvatelé: | Zernike Institute for Advanced Materials, Photophysics and OptoElectronics |
| Rok vydání: | 2010 |
| Předmět: |
Electron mobility
Materials science THIN-FILM-TRANSISTOR BLENDS Polymer solar cell Pentacene chemistry.chemical_compound CHARGE-TRANSPORT Materials Chemistry HIGH-MOBILITY PENTACENE business.industry Ambipolar diffusion Heterojunction General Chemistry Active layer chemistry ORGANIC HETEROSTRUCTURE Thin-film transistor METAL Optoelectronics Field-effect transistor ELECTRON business LIGHT-EMITTING TRANSISTORS CONJUGATED POLYMERS |
| Zdroj: | Journal of Materials Chemistry, 20(7), 1317-1321. ROYAL SOC CHEMISTRY |
| ISSN: | 1364-5501 0959-9428 |
| DOI: | 10.1039/b919596c |
| Popis: | We demonstrate solution processable all-polymer based field-effect transistors (FETs) exhibiting comparable electron and hole mobilities. The semiconducting layer is a bulk heterojunction of poly{[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)} (n-type polymer) and regioregular poly(3-hexylthiophene) (p-type polymer). These polymers form a type-II heterojunction as revealed by the faster photoluminescence dynamics of the blend compared to the pristine materials. An electron mobiliy of 4 x 10(-3) cm(2)/V s and a hole mobility of 2 x 10(-3) cm(2)/V s were extracted from the transfer characteristics of bottom contact FETs. The balanced mobilities suggest that the active layer is a fine network of the two components, as confirmed by atomic force microscopy phase images. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|