Theory and optimisation of 1.3 and 1.55 μm (Al)InGaAs metamorphic quantum well lasers
| Autor: | Silviu Bogusevschi, Eoin P. O'Reilly, Christopher A. Broderick |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Quantum well lasers
Materials science Differential gain (Al)InGaAs Lattice-mismatched heterostructure growth High differential gain 02 engineering and technology Semiconductor laser theory law.invention Gallium arsenide chemistry.chemical_compound 020210 optoelectronics & photonics Current density Indium compounds law 0202 electrical engineering electronic engineering information engineering Wavelength 1.55 mum Aluminium compounds Laser theory Quantum well GaAs-based long-wavelength semiconductor lasers Semiconductor lasers Substrates business.industry GaAs 020208 electrical & electronic engineering Optical confinement Heterojunction Laser Low threshold current densities chemistry Metals Optical fabrication Optical materials GaAs-based (Al)InGaAs metamorphic quantum well lasers Performance evaluation Optoelectronics business Optical design techniques Wavelength 1.3 mum Indium gallium arsenide |
| Zdroj: | Broderick, C A, Bogusevschi, S & O’Reilly, E P 2016, Theory and optimisation of 1.3 and 1.55 μm (Al)InGaAs metamorphic quantum well lasers . in 2016 16th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016) : Proceedings of a meeting held 11-15 July 2016, Sydney, Australia . Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Institute of Electrical and Electronics Engineers (IEEE), pp. 19-20, Numerical Simulation of Optoelectronic Devices, Sydney, Australia, 11/07/16 . https://doi.org/10.1109/NUSOD.2016.7546993 |
| Popis: | The use of InGaAs metamorphic buffer layers (MBLs) to facilitate the growth of lattice-mismatched heterostructures constitutes an attractive approach to developing long-wavelength semiconductor lasers on GaAs substrates, since they offer the improved carrier and optical confinement associated with GaAs-based materials. We present a theoretical study of GaAs-based 1.3 and 1.55 μm (Al)InGaAs quantum well (QW) lasers grown on InGaAs MBLs. We demonstrate that optimised 1.3 μm metamorphic devices offer low threshold current densities and high differential gain, which compare favourably with InP-based devices. Overall, our analysis highlights and quantifies the potential of metamorphic QWs for the development of GaAs-based long-wavelength semiconductor lasers, and also provides guidelines for the design of optimised devices. |
| Databáze: | OpenAIRE |
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