Photocurrents Recovery in GaN UV Sensors Using Microheaters at Low Temperatures
| Autor: | Sanghun Shin, Heewon Lee, Hongyun So |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
Microheater
Materials science microheater General Computer Science Photodetector Gallium nitride 02 engineering and technology low temperature photocurrent medicine.disease_cause 01 natural sciences chemistry.chemical_compound Electrical resistivity and conductivity 0103 physical sciences medicine General Materials Science ultraviolet sensors 010302 applied physics business.industry Photoconductivity General Engineering 021001 nanoscience & nanotechnology Semiconductor chemistry Optoelectronics lcsh:Electrical engineering. Electronics. Nuclear engineering 0210 nano-technology business Joule heating lcsh:TK1-9971 Ultraviolet |
| Zdroj: | IEEE Access, Vol 9, Pp 54184-54189 (2021) |
| ISSN: | 2169-3536 |
| Popis: | At various low-temperature conditions, it is difficult to obtain an accurate sensing response due to temperature-dependent material properties such as bandgap and resistivity of semiconductors. In this study, a gallium nitride (GaN)-based ultraviolet (UV) photodetector with a microheater was demonstrated to compensate for the low-temperature effects. A parallel-type platinum microheater array was fabricated to supply thermal energy by Joule heating. In addition, a silicon oxide layer was deposited between the heater and the GaN surface, allowing an independent voltage supply. Therefore, the change in the signal level was successfully recovered to the initial state in the temperature range of $-27.4-11.5 ^{\circ }\text{C}$ within ~0.64% error without electrical interference. This study supports an active, accurate, and reliable method for the stable measurement of UV signals in various low-temperature environments such as freezer warehouses, Antarctic research stations, and in space. |
| Databáze: | OpenAIRE |
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