14xx-nm high brightness tapered diode lasers grown by solid-source MBE
| Autor: | G. Weimann, Marc T. Kelemen, R. Losch, S. Kallenbach, Michael Mikulla, Rolf Aidam, G. Kaufel |
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| Přispěvatelé: | Publica |
| Rok vydání: | 2006 |
| Předmět: |
high brightness
Brightness 14xx nm Materials science business.industry solid-cource molecular beam epitaxy (SSMBE) semiconductor lasers Epitaxy Laser Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Semiconductor laser theory law.invention Gallium arsenide chemistry.chemical_compound Electricity generation Optics chemistry law InGaAsP Optoelectronics Electrical and Electronic Engineering business Molecular beam epitaxy Diode |
| Zdroj: | IEEE Photonics Technology Letters. 18:655-657 |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/lpt.2006.870124 |
| Popis: | We demonstrate a 1470-nm InGaAsP high-power tapered diode laser grown by all solid-source molecular beam epitaxy. Devices compare well to metal-organic vapor phase epitaxy grown lasers and reach 1.6 W of total power and 1 W of nearly diffraction-limited output power. First reliability tests indicate lifetimes exceeding 10 000 h. |
| Databáze: | OpenAIRE |
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