Functional Circuitry on Commercial Fabric via Textile-Compatible Nanoscale Film Coating Process for Fibertronics
| Autor: | Kyoungsik Yu, Yang-Kyu Choi, Seung-Bae Jeon, Hagyoul Bae, Sung-Yool Choi, Byung Chul Jang, Gyeongho Son, Soo-Ho Jung, Sung Gap Im, Hye Moon Lee, Hongkeun Park, Il-Woong Tcho, Jun-Young Park |
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| Rok vydání: | 2017 |
| Předmět: |
Fabrication
Materials science Mechanical Engineering Bioengineering Nanotechnology 02 engineering and technology General Chemistry Yarn Chemical vapor deposition 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Dip-coating 0104 chemical sciences Film coating visual_art Electronic component visual_art.visual_art_medium General Materials Science Electronics 0210 nano-technology Layer (electronics) ComputingMethodologies_COMPUTERGRAPHICS |
| Zdroj: | Nano Letters. 17:6443-6452 |
| ISSN: | 1530-6992 1530-6984 |
| DOI: | 10.1021/acs.nanolett.7b03435 |
| Popis: | Fabric-based electronic textiles (e-textiles) are the fundamental components of wearable electronic systems, which can provide convenient hand-free access to computer and electronics applications. However, e-textile technologies presently face significant technical challenges. These challenges include difficulties of fabrication due to the delicate nature of the materials, and limited operating time, a consequence of the conventional normally on computing architecture, with volatile power-hungry electronic components, and modest battery storage. Here, we report a novel poly(ethylene glycol dimethacrylate) (pEGDMA)-textile memristive nonvolatile logic-in-memory circuit, enabling normally off computing, that can overcome those challenges. To form the metal electrode and resistive switching layer, strands of cotton yarn were coated with aluminum (Al) using a solution dip coating method, and the pEGDMA was conformally applied using an initiated chemical vapor deposition process. The intersection of two Al/pEGDMA coated yarns becomes a unit memristor in the lattice structure. The pEGDMA-Textile Memristor (ETM), a form of crossbar array, was interwoven using a grid of Al/pEGDMA coated yarns and untreated yarns. The former were employed in the active memristor and the latter suppressed cell-to-cell disturbance. We experimentally demonstrated for the first time that the basic Boolean functions, including a half adder as well as NOT, NOR, OR, AND, and NAND logic gates, are successfully implemented with the ETM crossbar array on a fabric substrate. This research may represent a breakthrough development for practical wearable and smart fibertronics. |
| Databáze: | OpenAIRE |
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