Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor deposition
| Autor: | Marcel A. Verheijen, Kathrin Frei, Frank Altmann, Patrick Waltereit, Stefano Leone, Theodor Fuchs, Michael Fiederle, Oliver Ambacher, Andreas Graff, Jana Ligl, Michél Simon-Najasek, Christian Manz, Mario Prescher, Lutz Kirste |
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| Přispěvatelé: | Atomic scale processing, Plasma & Materials Processing, Publica |
| Rok vydání: | 2021 |
| Předmět: |
Atom diffusion
Materials science business.industry Transconductance High electron mobility transistor ScAlN Heterojunction aluminium scandium nitride High-electron-mobility transistor Chemical vapor deposition Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials Secondary ion mass spectrometry MOCVD Materials Chemistry Optoelectronics Metalorganic vapour phase epitaxy Electrical and Electronic Engineering business AlScN Aluminum scandium nitride Molecular beam epitaxy |
| Zdroj: | Semiconductor Science and Technology, 36(3):034003. Institute of Physics |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/1361-6641/abd924 |
| Popis: | AlScN/GaN epitaxial heterostructures have raised much interest in recent years, because of the high potential of such structures for high-frequency and high-power electronic applications. Compared to conventional AlGaN/GaN heterostructures, the high spontaneous and piezoelectric polarization of AlScN can yield to a five-time increase in sheet carrier density of the two-dimensional electron gas formed at the AlScN/GaN heterointerface. Very promising radio-frequency device performance has been shown on samples deposited by molecular beam epitaxy. Recently, AlScN/GaN heterostructures have been demonstrated, which were processed by the more industrial compatible growth method metal-organic chemical vapor deposition (MOCVD). In this work, SiN x passivated MOCVD-grown AlScN/GaN heterostructures with improved structural quality have been developed. Analytical transmission electron microscopy, secondary ion mass spectrometry and high-resolution x-ray diffraction analysis indicate the presence of undefined interfaces between the epitaxial layers and an uneven distribution of Al and Sc in the AlScN layer. However, AlScN-based high-electron-mobility transistors (HEMT) have been fabricated and compared with AlN/GaN HEMTs. The device characteristics of the AlScN-based HEMT are promising, showing a transconductance close to 500 mS mm−1 and a drain current above 1700 mA mm−1. |
| Databáze: | OpenAIRE |
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