On-Chip Terahertz Detector Designed with Inset-Feed Rectangular Patch Antenna and Catadioptric Lens
| Autor: | Fan Zhao, Sheng Xie, Weilian Guo, Clarence Augustine T. H. Tee, Lu-Hong Mao |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
CMOS process
Materials science Computer Networks and Communications Terahertz radiation lcsh:TK7800-8360 02 engineering and technology law.invention Catadioptric system Responsivity Optics law 0202 electrical engineering electronic engineering information engineering Electrical and Electronic Engineering THz detector Patch antenna catadioptric horn-like lens business.industry lcsh:Electronics 020208 electrical & electronic engineering Detector 020206 networking & telecommunications rectangular inset-feed patch antenna Antenna efficiency Lens (optics) Hardware and Architecture Control and Systems Engineering Signal Processing Antenna (radio) business |
| Zdroj: | Electronics Volume 9 Issue 6 Electronics, Vol 9, Iss 1049, p 1049 (2020) |
| ISSN: | 2079-9292 |
| DOI: | 10.3390/electronics9061049 |
| Popis: | This study proposes an on-chip terahertz (THz) detector designed with on-chip inset-feed rectangular patch antenna and catadioptric lens. The detector incorporates a dual antenna and dual NMOSFET structure. Radiation efficiency of the antenna reached 89.4% with 6.89 dB gain by optimizing the antenna inset-feed and micro-strip line sizes. Simulated impedance was 85.55 &minus j19.81 &Omega and the impedance of the antenna with the ZEONEX horn-like catadioptric lens was 117.03 &minus j20.28 &Omega Maximum analyzed gain of two on-chip antennas with catadioptric lens was 17.14 dB resonating at 267 GHz. Maximum experimental gain of two on-chip patch antennas was 4.5 dB at 260 GHz, increasing to 10.67 dB at 250 GHz with the catadioptric lens. The proposed on-chip rectangular inset-feed patch antenna has a simple structure, compatible with CMOS processing and easily implemented. The horn-like catadioptric lens was integrated into the front end of the detector chip and hence is easily molded and manufactured, and it effectively reduced terahertz power absorption by the chip substrate. This greatly improved the detector responsivity and provided very high gain. Corresponding detector voltage responsivity with and without the lens was 95.67 kV/W with NEP = 12.8 pW/Hz0.5 at 250 GHz, and 19.2 kV/W with NEP = 67.2 pW/Hz0.5 at 260 GHz, respectively. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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