| Autor: |
Fabrizio Torricelli, L. Lorenzelli, A. Adami, Paolo Romele, Matteo Ghittorelli, F. Giacomozzi |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
2019 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS). |
| DOI: |
10.1109/fleps.2019.8792310 |
| Popis: |
Solution processed Organic Ferroelectric Memory Diodes (OFMDs) are one of the most promising non-volatile memory elements for large area flexible electronics [1] – [4] . In OFMDs it is possible to improve the ON/OFF current ratio by orders of magnitude by simply increasing the charge injection barrier [5] , [6] , at the expenses of the data retention [7] . In this work we demonstrate that it is possible to tune the ON/OFF current ratio by orders of magnitude even in the case of very low charge injection barriers, paving the way for long-missing OFMDs. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
