Floating Stacking Fault during Homoepitaxial Growth of Ag(111)

Autor:	S.A. de Vries, W.J. Huisman, Elias Vlieg, M.J. Zwanenburg, P. Goedtkindt, S. L. Bennett
Rok vydání:	1998
Předmět:	Crystallography Optics Materials science business.industry Scattering Physics Monolayer Stacking General Physics and Astronomy business Kinetic energy Layer (electronics) Stacking fault
Zdroj:	Scopus-Elsevier Physical review letters
ISSN:	1079-7114 0031-9007
DOI:	10.1103/physrevlett.81.381
Popis:	We have investigated the influence of Sb on the formation of stacking faults during Ag(111) growth using x-ray scattering. In equilibrium, a predeposition of 1/3 monolayer Sb results in a (root 3 X root 3)R 30 degrees reconstruction in which the top layer is wrongly stacked. Upon continued Ag growth at 100 degrees C, the Sb segregates and the Ag atoms return to the correct stacking, while the new Ag atoms in the top layer again have the wrong stacking. This thus effectively leads to a floating stacking fault. Because of kinetic limitations, the same effect occurs for lower Sb coverages.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4141fcc76eabbe49f8e55f4a39655977 https://doi.org/10.1103/physrevlett.81.381 Zobrazit plný text záznamu