| Autor: |
Robert F. Hicks, Paul E. Gee, Haihua Qi |
| Rok vydání: |
1994 |
| Předmět: |
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| Zdroj: |
Physical Review Letters. 72:250-253 |
| ISSN: |
0031-9007 |
| DOI: |
10.1103/physrevlett.72.250 |
| Popis: |
The infrared spectra of adsorbed hydrogen and deuterium on c(2\ifmmode\times\else\texttimes\fi{}8) and (2\ifmmode\times\else\texttimes\fi{}6) GaAs(100) contain a series of bands from 2200 to 1200 (1600 to 1000) ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ that are due to arsenic hydrides, terminal gallium hydrides, and bridging gallium hydrides (and deuterides). The latter is the first known example of bridge-bonded hydrogen on a semiconductor surface. Polarized spectra reveal that the AsH and GaH bonds orient along the [1\ifmmode\bar\else\textasciimacron\fi{}10] and [110] axis, respectively. These results are consistent with a GaAs surface structure composed of As and Ga dimers with dimer bonds in the [1\ifmmode\bar\else\textasciimacron\fi{}1 0] and [110] directions. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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