Optically controlled magnetic-field etching on the nano-scale
| Autor: | Maiku Yamaguchi, Fabrice Stehlin, Katsuyuki Nobusada, Daniel Bloch, Olivier Soppera, Satoshi Tojo, Toshiki Tsuboi, Takashi Yatsui |
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| Přispěvatelé: | The University of Tokyo (UTokyo), Institute for Molecular Sciences, National Institutes of Natural Sciences, Department of Physics, Chuo University, Chuo University (Chuo University), Institut de Science des Matériaux de Mulhouse (IS2M), Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Physique des Lasers (LPL), Université Paris 13 (UP13)-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Physics::Instrumentation and Detectors Nanophotonics 02 engineering and technology Electron 7. Clean energy 01 natural sciences Electric field 0103 physical sciences optically controlled magnetic-field interaction 010306 general physics Plasmon nano-scale [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics] Condensed matter physics business.industry Nonlinear optics 021001 nanoscience & nanotechnology Polarization (waves) Ray Atomic and Molecular Physics and Optics Computer Science::Other Electronic Optical and Magnetic Materials Magnetic field near-field etching Optoelectronics Original Article 0210 nano-technology business |
| Zdroj: | Light: Science and Applications Light: Science and Applications, Nature Publishing Group, 2016, ⟨10.1038/lsa.2016.54⟩ Light, Science & Applications |
| ISSN: | 2047-7538 2095-5545 |
| Popis: | Electric and magnetic fields play an important role in both chemical and physical reactions. However, since the coupling efficiency between magnetic fields and electrons is low in comparison with that between electric fields and electrons in the visible wavelength region, the magnetic field is negligible in photo-induced reactions. Here, we performed photo-etching of ZrO2 nano-stripe structures, and identified an etching-property polarisation dependence. Specifically, the etching rate and etched profiles depend on the structure width. To evaluate this polarisation-dependent etching, we performed numerical calculations using a finite-difference time-domain method. Remarkably, the numerical results revealed that the polarisation-dependent etching properties were determined by the magnetic field distributions, rather than the electric field distributions. As nano-scale structures induce a localised magnetic field, the discovery of this etching dependence on the magnetic field is expected to introduce a new perspective on advanced nano-scale structure fabrication. The magnetic-field polarization of incident light has been found to affect photoetching of zirconium oxide (ZrO2) nanostripes. Takashi Yatsui of the University of Tokyo and co-workers in Japan and France have found that the etching rates and the profiles of etched structures depended on the incident polarization. Numerical calculations revealed that this polarization dependence of the etching properties stemmed from the distribution of the magnetic field rather than that of the electric field. This is a surprising result since the magnetic field is generally ignored in light-induced reactions because it is considered to have negligible interaction with materials due to its low coupling efficiency with the electrons in a material. The inclusion of the magnetic field will provide an extra degree of freedom when fabricating nanostructures for advanced optical and electrical devices. |
| Databáze: | OpenAIRE |
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