High dielectric constant nickel-doped titanium oxide films prepared by liquid-phase deposition
| Autor: | Chih-Feng Yen, Cho-Han Fan, Ming-Kwei Lee |
|---|---|
| Jazyk: | angličtina |
| Předmět: |
inorganic chemicals
Materials science Silicon Chemistry(all) Inorganic chemistry Doping technology industry and agriculture chemistry.chemical_element Equivalent oxide thickness General Chemistry Substrate (electronics) Dielectric equipment and supplies Titanium oxide Nickel chemistry Materials Science(all) General Materials Science High-κ dielectric |
| Zdroj: | Applied Physics A. 116(4):2007-2010 |
| ISSN: | 0947-8396 |
| DOI: | 10.1007/s00339-014-8386-3 |
| Popis: | The electrical characteristics of nickel-doped titanium oxide films prepared by liquid-phase deposition on p-type (100) silicon substrate were investigated. The aqueous solutions of ammonium hexafluorotitanate and boric acid were used as precursors for the growth of titanium oxide films and the dielectric constant is 29. The dielectric constant can be improved to 94 by nickel doping at the thermal annealing at 700 °C in nitrous oxide. |
| Databáze: | OpenAIRE |
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