Experimental and Analytical Study of the Responses of Nanoscale Devices to Neutrons Impinging at Various Incident Angles
| Autor: | Hortensia Mecha, Juan Antonio Clemente, Helmut Puchner, Francisco J. Franco, Guillaume Hubert, Juan Carlos Fabero, Mohammadreza Rezaei, Golnaz Korkian |
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| Přispěvatelé: | Universidad Complutense de Madrid = Complutense University of Madrid [Madrid] (UCM), ONERA / DPHY, Université de Toulouse [Toulouse], PRES Université de Toulouse-ONERA, Cypress Semiconductor [San Jose] |
| Rok vydání: | 2020 |
| Předmět: |
Nuclear and High Energy Physics
Materials science media_common.quotation_subject Radiation 01 natural sciences Asymmetry Upset [SPI]Engineering Sciences [physics] Optics 0103 physical sciences Sensitivity (control systems) Static random-access memory Electrical and Electronic Engineering media_common [PHYS]Physics [physics] Commercial-off-the-shelf (COTS) Angle of incidence 010308 nuclear & particles physics business.industry Isotropy Non-volatile memory Nuclear Energy and Engineering MUltisSCAles Single-Event Phenomena Predictive Platform (MUSCA-SEP3) Single-Event Upset (SEU) Neutron tests Particle Electrónica Static Random Access Memory (SRAM) Electricidad business |
| Zdroj: | E-Prints Complutense. Archivo Institucional de la UCM instname IEEE Transactions on Nuclear Science IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2020, 67 (11), pp.2345-2352. ⟨10.1109/TNS.2020.3025104⟩ E-Prints Complutense: Archivo Institucional de la UCM Universidad Complutense de Madrid |
| ISSN: | 0018-9499 |
| DOI: | 10.1109/TNS.2020.3025104⟩ |
| Popis: | International audience; In harsh radiation environments, it is well known that the angle of incidence of impinging particles against the surface of the operating devices has significant effects on their sensitivity. This article discusses the sensitivity underestimations that are made if particle isotropy is not taken into account, by means of an analytical study made with a single-event upset predictive platform. To achieve this goal, experimental results carried out with a commercial-off-the-shelf (COTS) bulk 130-nm nonvolatile static random access memory (SRAM) for various incident angles on 14.2 MeV neutrons are first discussed. Then, a modeling tool called multiscales single-event phenomena predictive platform (MUSCA-SEP3) is used to predict the sensitivity of this memory under the same environmental conditions. Predictions and experimental results will be cross-checked, and therefore, the feasibility of this tool will be demonstrated for testing any other incident angle. Finally, an isotropic environment and an XY SRAM array will be emulated with MUSCA in order to demonstrate that the asymmetrical cross sections that were observed experimentally for various incidence angles are due to the underlying asymmetry of the metalization/passivation layers within the device with respect to its active silicon. Conclusions will finally be drawn as for the importance of taking into account particle isotropy in radiation-ground tests. |
| Databáze: | OpenAIRE |
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