Two‐band modeling of narrow band gap and interband tunneling devices
Autor: | J. R. Söderström, Edward T. Yu, M. K. Jackson, Y. Rajakarunanayake, T. C. McGill |
---|---|
Rok vydání: | 1990 |
Předmět: | |
Zdroj: | Journal of Applied Physics. 68:1372-1375 |
ISSN: | 1089-7550 0021-8979 |
Popis: | A two-band transfer matrix method has been developed to study tunneling currents in narrow gap and interband tunnel structures. This relatively simple model gives good agreement with recently reported experimental results for InAs/AlSb/InAs/AlSb/InAs double-barrier heterostructures and InAs/AlSb/GaSb/AlSb/InAs resonant interband tunneling devices, and should be useful in the design of new interband tunneling devices. |
Databáze: | OpenAIRE |
Externí odkaz: |