Two‐band modeling of narrow band gap and interband tunneling devices

Autor: J. R. Söderström, Edward T. Yu, M. K. Jackson, Y. Rajakarunanayake, T. C. McGill
Rok vydání: 1990
Předmět:
Zdroj: Journal of Applied Physics. 68:1372-1375
ISSN: 1089-7550
0021-8979
Popis: A two-band transfer matrix method has been developed to study tunneling currents in narrow gap and interband tunnel structures. This relatively simple model gives good agreement with recently reported experimental results for InAs/AlSb/InAs/AlSb/InAs double-barrier heterostructures and InAs/AlSb/GaSb/AlSb/InAs resonant interband tunneling devices, and should be useful in the design of new interband tunneling devices.
Databáze: OpenAIRE