Lithiation of pure and methylated amorphous silicon: Monitoring by operando optical microscopy and ex situ atomic force microscopy
| Autor: | Bon Min Koo, François Ozanam, Yue Feng, Catherine Henry-de-Villeneuve, Abdelhak Cheriet, Thuy-Doan-Trang Ngo, Marianthi Panagopoulou, Michel Rosso |
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| Přispěvatelé: | Laboratoire de physique de la matière condensée (LPMC), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Amorphous silicon
Morphology (linguistics) Thin layers Materials science Silicon Atomic force microscopy General Chemical Engineering Analytical chemistry chemistry.chemical_element 02 engineering and technology [CHIM.MATE]Chemical Sciences/Material chemistry 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Crystallographic defect 0104 chemical sciences law.invention chemistry.chemical_compound chemistry Optical microscope law Microscopy Electrochemistry 0210 nano-technology ComputingMilieux_MISCELLANEOUS |
| Zdroj: | Electrochimica Acta Electrochimica Acta, Elsevier, 2019, 302, pp.249-258. ⟨10.1016/j.electacta.2019.02.016⟩ |
| ISSN: | 0013-4686 |
| DOI: | 10.1016/j.electacta.2019.02.016⟩ |
| Popis: | Operando color microscopy and ex situ AFM were used to investigate the lithiation process in pure (a-Si:H) and methylated (a-Si1-x(CH3)x:H) amorphous silicon thin layers. Color analysis of optical images allows for monitoring thickness changes of a-Si:H layers. Unlike pure a-Si:H, the first lithiation of a-Si1-x(CH3)x:H is found to be spatially non-uniform: lithiation starts at a limited number of locations then expands radially, forming circular lithiation spots. The morphology of the lithiation spots and their evolution is accurately measured by ex situ AFM. A mechanism is proposed to explain this phenomenon, involving the high resistivity of methylated silicon and the existence of low-resistance point defects. |
| Databáze: | OpenAIRE |
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