ns or fs pulsed laser ablation of a bulk InSb target in liquids for nanoparticles synthesis
| Autor: | M. Assoul, Euan Hendry, Virginie Moutarlier, B. Gauthier-Manuel, N. G. Semaltianos, Vahan Malkhasyan, Virginie Blondeau-Patissier, M. L. Wears, Guy Monteil, Hong Chang |
|---|---|
| Přispěvatelé: | University of Exeter, Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) (FEMTO-ST), Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Centre National de la Recherche Scientifique (CNRS), Univers, Transport, Interfaces, Nanostructures, Atmosphère et environnement, Molécules (UMR 6213) (UTINAM), Institut national des sciences de l'Univers (INSU - CNRS)-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC) |
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Laser ablation
Materials science business.industry Analytical chemistry Nanoparticle 02 engineering and technology Nanosecond [SPI.MECA]Engineering Sciences [physics]/Mechanics [physics.med-ph] 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Laser ablation synthesis in solution 0104 chemical sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Biomaterials Colloid and Surface Chemistry Semiconductor Femtosecond Vaporization Melting point 0210 nano-technology business |
| Zdroj: | Journal of Colloid and Interface Science Journal of Colloid and Interface Science, Elsevier, 2016, 469 (1), pp.57--62 |
| ISSN: | 0021-9797 1095-7103 |
| Popis: | International audience; Laser ablation of bulk target materials in liquids has been established as an alternative method for the synthesis of nanoparticles colloidal solutions mainly due to the fact that the synthesized nanoparticles have bare, ligand-free surfaces since no chemical precursors are used for their synthesis. InSb is a narrow band gap semiconductor which has the highest carrier mobility of any known semiconductor and nanoparticles of this material are useful in optoelectronic device fabrication. In this paper a bulk InSb target was ablated in deionized (DI) water or ethanol using a nanosecond (20ns) or a femtosecond (90fs) pulsed laser source, for nanoparticles synthesis. In all four cases the largest percentage of the nanoparticles are of InSb in the zincblende crystal structure with fcc lattice. Oxides of either In or Sb are also formed in the nanoparticles ensembles in the case of ns or fs ablation, respectively. Formation of an oxide of either element from the two elements of the binary bulk alloy is explained based on the difference in the ablation mechanism of the material in the case of ns or fs pulsed laser irradiation in which the slow or fast deposition of energy into the material results to mainly melting or vaporization, respectively under the present conditions of ablation, in combination with the lower melting point but higher vaporization enthalpy of In as compared to Sb. InSb in the metastable phase with orthorhombic lattice is also formed in the nanoparticles ensembles in the case of fs ablation in DI water (as well as oxide of InSb) which indicates that the synthesized nanoparticles exhibit polymorphism controlled by the type of the laser source used for their synthesis. The nanoparticles exhibit absorption which is observed to be extended in the infrared region of the spectrum. |
| Databáze: | OpenAIRE |
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