Energy-Efficient Phase-Change Memory with Graphene as a Thermal Barrier
| Autor: | Scott W. Fong, Kenneth E. Goodson, Aditya Sood, H.-S. Philip Wong, Eric Pop, Chiyui Ahn, Yong-Sung Kim, Christopher M. Neumann, Seunghyun Lee, Mehdi Asheghi |
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| Rok vydání: | 2015 |
| Předmět: |
Materials science
business.industry Graphene Mechanical Engineering Thermal resistance Bioengineering Nanotechnology General Chemistry Condensed Matter Physics law.invention Thermal barrier coating Phase-change memory Thermal conductivity law Computer data storage Interfacial thermal resistance Optoelectronics General Materials Science Joule heating business |
| Zdroj: | Nano Letters. 15:6809-6814 |
| ISSN: | 1530-6992 1530-6984 |
| DOI: | 10.1021/acs.nanolett.5b02661 |
| Popis: | Phase-change memory (PCM) is an important class of data storage, yet lowering the programming current of individual devices is known to be a significant challenge. Here we improve the energy-efficiency of PCM by placing a graphene layer at the interface between the phase-change material, Ge2Sb2Te5 (GST), and the bottom electrode (W) heater. Graphene-PCM (G-PCM) devices have ∼40% lower RESET current compared to control devices without the graphene. This is attributed to the graphene as an added interfacial thermal resistance which helps confine the generated heat inside the active PCM volume. The G-PCM achieves programming up to 10(5) cycles, and the graphene could further enhance the PCM endurance by limiting atomic migration or material segregation at the bottom electrode interface. |
| Databáze: | OpenAIRE |
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