Altering the Optical Properties of GaAsSb-Capped InAs Quantum Dots by Means of InAlAs Interlayers
| Autor: | Hamad Albrithen, Abdulrahman M. Albadri, Mohamed Missous, Abdelmajid Salhi, Yazeed Alaskar, Ahmed Y. Alyamani, S. Alshaibani |
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| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Diffraction
Photoluminescence Materials science Nanochemistry 02 engineering and technology 010402 general chemistry 01 natural sciences Strain Laser linewidth Materials Science(all) lcsh:TA401-492 General Materials Science Spectroscopy Nano Express business.industry Quantum dots III–V semiconductors 021001 nanoscience & nanotechnology Condensed Matter Physics 0104 chemical sciences Quantum dot Excited state InAlAs/GaAsSb Optoelectronics lcsh:Materials of engineering and construction. Mechanics of materials 0210 nano-technology business Ground state |
| Zdroj: | Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-6 (2019) Nanoscale Research Letters Salhi, A, Alshaibani, S, Alaskar, Y, Albrithen, H, Albadri, A, Alyamani, A & Missous, M 2019, ' Altering the Optical Properties of GaAsSb-Capped InAs Quantum Dots by Means of InAlAs Interlayers ', Nanoscale Research Letters, vol. 14, 41 . https://doi.org/10.1186/s11671-019-2877-2 |
| ISSN: | 1931-7573 |
| Popis: | In this work, we investigate the optical properties of InAs quantum dots (QDs) capped with composite In 0.15 Al 0.85 As/GaAs 0.85 Sb 0.15 strain-reducing layers (SRLs) by means of high-resolution X-ray diffraction (HRXRD) and photoluminescence (PL) spectroscopy at 77 K. Thin In 0.15 Al 0.85 As layers with thickness t = 20 Å, 40 Å, and 60 Å were inserted between the QDs and a 60-Å-thick GaAs 0.85 Sb 0.15 layer. The type II emissions observed for GaAs 0.85 Sb 0.15 -capped InAs QDs were suppressed by the insertion of the In 0.15 Al 0.85 As interlayer. Moreover, the emission wavelength was blueshifted for t = 20 Å and redshifted for t ≥ 40 Å resulting from the increased confinement potential and increased strain, respectively. The ground state and excited state energy separation is increased reaching 106 meV for t = 60 Å compared to 64 meV for the QDs capped with only GaAsSb SRL. In addition, the use of the In 0.15 Al 0.85 As layers narrows significantly the QD spectral linewidth from 52 to 35 meV for the samples with 40- and 60-Å-thick In 0.15 Al 0.85 As interlayers. |
| Databáze: | OpenAIRE |
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