Topological insulator homojunctions including magnetic layers: The example of n-p type (n-QLs Bi2Se3/Mn-Bi2Se3) heterostructures
| Autor: | G. Springholz, Jens Wiebe, Ph. Hofmann, Martin Vondráček, V. Holy, M. Vališka, Jan Honolka, Matteo Michiardi, V. Sechovsky, Jonas Warmuth, Arlette S. Ngankeu, Marco Bianchi |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
SURFACE Physics and Astronomy (miscellaneous) FOS: Physical sciences Angle-resolved photoemission spectroscopy 02 engineering and technology Type (model theory) FILMS 01 natural sciences Condensed Matter::Materials Science Condensed Matter::Superconductivity Phase (matter) 0103 physical sciences 010306 general physics Spin-½ Condensed Matter - Materials Science Condensed matter physics Materials Science (cond-mat.mtrl-sci) Heterojunction BI2SE3 021001 nanoscience & nanotechnology DIRAC FERMION Band bending Topological insulator Condensed Matter::Strongly Correlated Electrons 0210 nano-technology QUANTUM Molecular beam epitaxy |
| Zdroj: | Valiska, M, Warmuth, J, Michiardi, M, Vondracek, M, Ngankeu, A S, Holy, V, Sechovsky, V, Springholz, G, Bianchi, M, Wiebe, J, Hofmann, P & Honolka, J 2016, ' Topological insulator homojunctions including magnetic layers : The example of n-p type (n-QLs Bi2Se3/Mn-Bi2Se3) heterostructures ', Applied Physics Letters, vol. 108, no. 26, 262402 . https://doi.org/10.1063/1.4954834 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.4954834 |
| Popis: | Homojunctions between Bi$_2$Se$_3$ and its Mn-doped phase are investigated as a sample geometry to study the influence of spin degrees of freedom on topological insulator properties. $n$ quintuple layers (QLs) of Bi$_2$Se$_3$ are grown ontop of Mn-doped Bi$_2$Se$_3$ by molecular beam epitaxy for $0\le n \le 30\,$QLs, allowing to unhamperedly monitor the development of electronic and topological properties by surface sensitive techniques like angle resolved photoemission spectroscopy. With increasing $n$, a Mn-induced gap at the Dirac point is gradually filled in an "hourglass" fashion to reestablish a topological surface state at $n \sim 9\,$QLs. Our results suggest a competition of upwards and downwards band bending effects due to the presence of an n-p type interface, which can be used to tailor topological and quantum well states independently. 5 pages, 5 figures |
| Databáze: | OpenAIRE |
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