Formation of Aligned α-Si3N4 Microfibers by Plasma Nitridation of Si (110) Substrate Coated with SiO2
| Autor: | Li Chang, Chang-Hua Yu, Thi-Hien Do, Wei Chun Chen, Kun-An Chiu |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Materials science
electron microscopy Scanning electron microscope Analytical chemistry Surfaces and Interfaces Substrate (electronics) Engineering (General). Civil engineering (General) Surfaces Coatings and Films Amorphous solid symbols.namesake Scanning transmission electron microscopy Materials Chemistry symbols Si3N4 Crystallite nitridation TA1-2040 Raman spectroscopy Layer (electronics) Nitriding plasma fiber |
| Zdroj: | Coatings, Vol 11, Iss 1251, p 1251 (2021) Coatings Volume 11 Issue 10 |
| ISSN: | 2079-6412 |
| Popis: | Plasma nitridation of an amorphous SiO2 layer on Si (110) substrate can form well-aligned α-Si3N4 crystallites in fibrous morphology. Nitriding is performed at a temperature in the range of 800–1000 °C by using microwave plasma with a gas mixture of N2 and H2. Raman spectroscopy shows the characteristics of an α-Si3N4 phase without other crystalline nitrides. As shown by scanning electron microscopy, the formed α-Si3N4 microfibers on the Si substrate can be in a dense and straight array nearly along with Si < 11¯0> and can have a length over 2 mm with a diameter in the range of 5–10 μm. Structural characterization of scanning transmission electron microscopy in cross section view reveals that the elongated α-Si3N4 crystallites are formed on the surface of the nitrided SiO2/Si (110) substrate without any interlayers between Si3N4 and Si, and the longitudinal direction of α-Si3N4 appears mainly along < 112¯0> which is approximately parallel to Si < |
| Databáze: | OpenAIRE |
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