Nitrogen bonding configurations near the oxynitride/silicon interface after oxynitridation in N2O ambient of a thin SiO2 gate
| Autor: | F. Monforte, Enza Fazio, Denise Calì, Giuseppe Currò, Fortunato Neri, M. Camalleri |
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| Rok vydání: | 2007 |
| Předmět: |
Silicon
Photoemission spectroscopy Analytical chemistry Oxide chemistry.chemical_element Condensed Matter Physics Isotropic etching Nitrogen Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound X-ray photoelectron spectroscopy chemistry Profile analysis Electrical and Electronic Engineering Safety Risk Reliability and Quality Layer (electronics) |
| Popis: | The identification of the bonding environments and their progressive modifications upon reaching the oxynitride/silicon interface, in a SiO 2 /SiO x N y /Si structure, have been investigated by means of X-ray photoemission spectroscopy (XPS). The SiO 2 film was grown at 850 °C by means of a mixed dry-steam process, followed by a 60 min, 950 °C furnace oxynitridation in N 2 O gas. A depth profile analysis was carried out by a progressive chemical etching procedure, reaching a residual oxide thickness of about 1.2 nm. XPS analysis of the Si 2p and N Is photoelectron peaks pointed out that the chemistry of the oxynitride layer is a rather complex one. Four different nitrogen bonding environments were envisaged. Both the overall nitrogen content, which rises up to 2.5%, and its bonding configurations are progressively changing while moving towards the silicon interface. |
| Databáze: | OpenAIRE |
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