Effect of Ta buffer layer and TaO x barrier thickness on the evolution of the structural and magnetic properties of the Fe/TaO x /Co trilayers
Autor: | Süleyman Tari, Hüseyin Tokuç |
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Přispěvatelé: | Tokuç, Hüseyin, Tarı, Süleyman, Izmir Institute of Technology. Physics |
Jazyk: | angličtina |
Rok vydání: | 2010 |
Předmět: |
Materials science
Barrier layer thickness Annealing (metallurgy) Analytical chemistry Tantalum chemistry.chemical_element 02 engineering and technology Ferromagnetic layers 01 natural sciences Barrier layer chemistry.chemical_compound 0103 physical sciences Tantalum pentoxide General Materials Science Magnetron sputtering systems 010302 applied physics General Chemistry Sputter deposition Coercivity 021001 nanoscience & nanotechnology Magnetic hysteresis Magnetic anisotropy chemistry High vacuum Thin barriers 0210 nano-technology |
Popis: | Fe/TaO x /Co trilayers were grown on Si(100)/SiO2 substrates and on tantalum buffer layers by a high vacuum magnetron sputtering system. The effects of both Ta buffer layer and tantalum-oxide barrier layer thickness on the structural and magnetic properties and the coupling of the ferromagnetic layers have been studied. It was observed that Ta improves the structural properties of the Fe layer resulting in an increased coercive field. For a barrier thickness of 4 nm a weak decoupling starts to appear between the ferromagnetic layers and a clear step formation is observed with increasing thickness. The minor hysteresis loops predict an interlayer coupling for thin barriers. The annealing of trilayers up to 250°C shows an increased coercivity for only the Fe layer. Annealing further at 400°C has the opposite effect of decreasing the coercivity, indicating intermixing at the interfaces of the Fe. The refractive index of the insulator barrier shows that the barrier layer is not totally in the form of tantalum-pentoxide. © 2009 Springer-Verlag. The Scientific & Technological Research Council of Turkey under Grant No. TBAG-105T109 |
Databáze: | OpenAIRE |
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