Layer-by-layer assembled charge-trap memory devices with adjustable electronic properties
| Autor: | Chiyoung Lee, Hyunjung Shin, Jaegab Lee, Yong Mu Kim, Inpyo Kim, Jeongju Park, Jinhan Cho, Frank Caruso, Jang-Sik Lee |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
Nanostructure Silicon Biomedical Engineering Information Storage and Retrieval chemistry.chemical_element Nanoparticle Bioengineering Nanotechnology Flash memory General Materials Science Electrical and Electronic Engineering Ions Layer by layer Signal Processing Computer-Assisted Equipment Design Condensed Matter Physics Atomic and Molecular Physics and Optics Polyelectrolyte Nanostructures Equipment Failure Analysis Non-volatile memory chemistry Colloidal gold Gold Electronics Crystallization |
| Zdroj: | Nature Nanotechnology. 2:790-795 |
| ISSN: | 1748-3395 1748-3387 |
| Popis: | We describe a versatile approach for preparing flash memory devices composed of polyelectrolyte/gold nanoparticle multilayer films. Anionic gold nanoparticles were used as the charge storage elements, and poly(allylamine)/poly(styrenesulfonate) multilayers deposited onto hafnium oxide (HfO2)-coated silicon substrates formed the insulating layers. The top contact was formed by depositing HfO2 and platinum. In this study, we investigated the effect of increasing the number of polyelectrolyte and gold nanoparticle layers on memory performance, including the size of the memory window (the critical voltage difference between the 'programmed' and 'erased' states of the devices) and programming speed. We observed a maximum memory window of about 1.8 V, with a stored electron density of 4.2 x 1012 cm-2 in the gold nanoparticle layers, when the devices consist of three polyelectrolyte/gold nanoparticle layers. The reported approach offers new opportunities to prepare nanostructured polyelectrolyte/gold nanoparticle-based memory devices with tailored performance. |
| Databáze: | OpenAIRE |
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