Chemically Robust Indium Tin Oxide/Graphene Anode for Efficient Perovskite Light-Emitting Diodes
| Autor: | Wanhee Lee, Hae-Ryung Lee, Min-Ho Park, Tae-Woo Lee, Dong-Jin Kim, Sung Joo Kwon, Jinwoo Park, Jung-Min Heo, Byung Hee Hong, Jeong-Yun Sun, Young-Hoon Kim, Sung-Jin Kim, Soyeong Ahn, Huanyu Zhou |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
Photoluminescence
Materials science Graphene business.industry chemistry.chemical_element 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Isotropic etching 0104 chemical sciences Anode law.invention Indium tin oxide chemistry law Optoelectronics General Materials Science 0210 nano-technology business Luminescence Indium Perovskite (structure) |
| Zdroj: | ACS applied materialsinterfaces. 13(7) |
| ISSN: | 1944-8252 |
| Popis: | Graphene is an optimal material to be employed as an ionic diffusion barrier because of its outstanding impermeability and chemical robustness. Indium tin oxide (ITO) is often used in perovskite light-emitting diodes (PeLEDs), and it can release indium easily upon exposure to the acidic hole-injection layer so that luminescence can be quenched significantly. Here, we exploit the outstanding impermeability of graphene and use it as a chemical barrier to block the etching that can occur in ITO exposed to an acidic hole-injection layer in PeLEDs. This barrier reduced the luminescence quenching that these metallic species can cause, so the photoluminescence lifetime of perovskite film was substantially higher in devices with ITO and graphene layer (87.9 ns) than in devices that had only an ITO anode (22.1 ns). Luminous current efficiency was also higher in PeLEDs with a graphene barrier (16.4 cd/A) than in those without graphene (9.02 cd/A). Our work demonstrates that graphene can be used as a barrier to reduce the degradation of transparent electrodes by chemical etching in optoelectronic devices. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|