Transient memory effect in the photoluminescence of InGaN single quantum wells
| Autor: | Ulrich T. Schwarz, Ruggero Micheletto, Yoichi Kawakami, Masayoshi Abiko, Christian Feldmeier |
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| Rok vydání: | 2010 |
| Předmět: |
Range (particle radiation)
Photoluminescence Materials science Light business.industry Time constant Gallium Trapping Equipment Design Indium Atomic and Molecular Physics and Optics Photon counting Equipment Failure Analysis Optics Semiconductors Luminescent Measurements Quantum Dots Optoelectronics Computer-Aided Design Transient (oscillation) business Event (particle physics) Quantum well |
| Zdroj: | Optics express. 17(25) |
| ISSN: | 1094-4087 |
| Popis: | The transition to maximum photoluminescence of InGaN single quantum wells is a phenomena that has time constants in the range of few seconds. Using a systematic illumination/darkening procedure we found that these characteristics are related to previous stimulations as if the sample has a memory of past illumination events. Choosing opportune time sequences, time constants were observed to vary more than 100%. These facts suggest the presence of carrier trapping/de-trapping processes that act beyond the single illumination event, accumulating over time in a complex effect. |
| Databáze: | OpenAIRE |
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