1.3µm InGaAsP/InP semiconductor optical amplifier compatible with an active/passive integration technology

Autor: Stefanos Andreou, Dzmitry Pustakhod, Kevin A. Williams, Erwin Bente, Steven Kleijn, Joel Hazan
Přispěvatelé: Photonic Integration, NanoLab@TU/e
Jazyk: angličtina
Rok vydání: 2021
Předmět:
Zdroj: 2021 27th International Semiconductor Laser Conference (ISLC)
Popis: We present our latest results on 1300 nm band optical amplifiers and Fabry-Perot lasers in the development of a 1300nm active\passive photonic integration platform on InP. Modal gain, material transparency, temperature dependence are reported and analyzed for amplifiers that are optimized for low butt-joint reflections.
Databáze: OpenAIRE