Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond
| Autor: | Tokuyuki Teraji, Wataru Kada, Kanami Kato, Miki Kajiya, Hayate Yamano, Shinobu Onoda, Masafumi Inaba, Keisuke Yamada, Sora Kawai, Osamu Hanaizumi, Shozo Kono, Junichi Isoya, Moriyoshi Haruyama, Takashi Tanii, Evi Suaebah, Taisuke Kageura, Hiroshi Kawarada |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Materials science
General Engineering General Physics and Astronomy Diamond chemistry.chemical_element Charge (physics) 02 engineering and technology Plasma engineering.material 021001 nanoscience & nanotechnology 01 natural sciences Electric charge Nitrogen Molecular physics chemistry Vacancy defect 0103 physical sciences Monolayer engineering 010306 general physics 0210 nano-technology Voltage |
| Zdroj: | Applied Physics Express. 10:055503 |
| ISSN: | 1882-0786 1882-0778 |
| Popis: | A nitridation process of a diamond surface with nitrogen radical exposure far from the radio-frequency plasma for the stabilization of a negatively charged nitrogen-vacancy (NV−) centers near the surface is presented. At a nitrogen coverage of as high as 0.9 monolayers, high average Rabi contrasts of 0.40 ± 0.06 and 0.46 ± 0.03 have been obtained for single NV− centers formed by shallow nitrogen implantation with acceleration voltages of 1 and 2 keV, respectively. This indicates that nitrogen termination by a radical exposure process produces an electric charge state suitable for single NV− centers near the surface compared with the states obtained for alternatively terminated surfaces. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|