Gate-Induced Metal-Insulator Transition in 2D van der Waals Layers of Copper Indium Selenide Based Field-Effect Transistors
| Autor: | Sidong Lei, Arindam Ghosh, Sujoy Ghosh, Prasanna Patil, Robert Vajtai, Saikat Talapatra, Pulickel M. Ajayan, Milinda Wasala |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
Condensed matter physics General Engineering General Physics and Astronomy chemistry.chemical_element 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Copper 0104 chemical sciences symbols.namesake chemistry.chemical_compound chemistry Selenide Percolation symbols General Materials Science Field-effect transistor van der Waals force Metal–insulator transition 0210 nano-technology Indium |
| Zdroj: | ACS nano. 13(11) |
| ISSN: | 1936-086X |
| Popis: | The existence of an exquisite phenomenon such as a metal-insulator transition (MIT) in two-dimensional (2D) systems, where completely different electronic functionalities in the same system can emerge simply by regulating parameters such as charge carrier density in them, is noteworthy. Such tunability in material properties can lead to several applications where precise tuning of function specific properties are desirable. Here, we report on our observation on the occurrence of MIT in the 2D material system of copper indium selenide (CuIn |
| Databáze: | OpenAIRE |
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