Express determination of thickness and dielectric function of single-walled carbon nanotube films
| Autor: | Valentyn S. Volkov, Yury G. Gladush, Anton S. Anisimov, Albert G. Nasibulin, Alexey P. Tsapenko, Georgy A. Ermolaev |
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| Přispěvatelé: | Skolkovo Institute of Science and Technology, Department of Applied Physics, Moscow Institute of Physics and Technology, State University, Canatu Oy, Department of Chemistry and Materials Science, Aalto-yliopisto, Aalto University |
| Rok vydání: | 2020 |
| Předmět: |
GRAPHENE
Materials science Physics and Astronomy (miscellaneous) OPTICAL ANISOTROPY ELECTRODES Optical engineering FABRICATION 02 engineering and technology Carbon nanotube Dielectric 01 natural sciences law.invention Absorbance THIN-FILMS law Photovoltaics 0103 physical sciences Electronics 010302 applied physics business.industry 021001 nanoscience & nanotechnology TRANSPARENT Metrology Optoelectronics Photonics 0210 nano-technology business |
| Zdroj: | Applied Physics Letters. 116:231103 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/5.0012933 |
| Popis: | Single-walled carbon nanotube (SWCNT) films are promising building blocks for diversified applications in electronics, photovoltaics, and photonics. However, their electrical and optical engineering is still a challenging task owing to multiple obstacles, including the absence of fast and easy-to-use methods for the determination of SWCNT film properties. Here, we present a rapid, contactless, and universal technique for accurate estimation of both SWCNT film thicknesses and their dielectric functions. The approach combines broadband optical absorbance and highly sensitive spectroscopic ellipsometry measurements. The observed linear dependence of the film thickness on its absorbance at 550nm provides a time-effective and contactless method of thickness assignment, which is of significant importance to the practical implementation of SWCNT films in optoelectronic devices. Additionally, our approach revealed that a simple procedure of film densification allows to controllably alter the dielectric response by atleast 40% and, thus, to add extra fine-tuning capabilities during material property engineering. Therefore, this express technique as a whole offers an advanced metrological tool for current and next-generation SWCNT-based devices. |
| Databáze: | OpenAIRE |
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