Optimization of the tunnel MIS structure as a hot electron injector
| Autor: | A. F. Shulekin, I.V. Grekhov, Mikhail I. Vexler |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
Materials science
Silicon Bistability Auger effect business.industry Bipolar junction transistor Electrical engineering chemistry.chemical_element Injector Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect law.invention Auger symbols.namesake chemistry law Hardware_INTEGRATEDCIRCUITS symbols Physics::Accelerator Physics Optoelectronics business Hardware_LOGICDESIGN Common emitter |
| Zdroj: | Scopus-Elsevier |
| DOI: | 10.1109/drc.1995.496314 |
| Popis: | Summarizes results on optimisation of parameters of Al/SiO/sub 2//n-Si tunnel structures for different device applications. The most promising device is an Auger transistor-a bipolar transistor with tunnel MIS emitter (hot electron injector) and inversion base-due to high current gain and bistability of its output characteristics. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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