Investigation of domain wall pinning by square anti-notches and its application in three terminals MRAM
| Autor: | E. L. M. Paixão, D. Toscano, Fernando Sato, J. C. S. Gomes, P. Z. Coura, D. V. P. Massote, S. A. Leonel, C. I. L. de Araujo |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Magnetoresistive random-access memory Work (thermodynamics) Materials science Condensed Matter - Mesoscale and Nanoscale Physics Physics and Astronomy (miscellaneous) Magnetoresistance FOS: Physical sciences Physics - Applied Physics Applied Physics (physics.app-ph) 02 engineering and technology 021001 nanoscience & nanotechnology Topology 01 natural sciences Signal Square (algebra) Magnetization Domain wall (magnetism) Mesoscale and Nanoscale Physics (cond-mat.mes-hall) 0103 physical sciences Scalability 0210 nano-technology |
| Zdroj: | Applied Physics Letters. 114:212403 |
| ISSN: | 1077-3118 0003-6951 |
| Popis: | In this work, we perform investigations of the competition between domain-wall pinning and attraction by antinotches and finite device borders. The conditions for optimal geometries, which can attain a stable domain-wall pinning, are presented. This allows the proposition of a three-terminal device based on domain-wall pinning. We obtain, with very small pulses of current applied parallel to the nanotrack, a fast motion of the domain-wall between antinotches. In addition to this, a swift stabilization of the pinned domain-wall is observed with a high percentage of orthogonal magnetization, enabling high magnetoresistive signal measurements. Thus, our proposed device is a promising magnetoresistive random access memory device with good scalability, duration, and high speed information storage. |
| Databáze: | OpenAIRE |
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