PHOSPHORUS SPUTTERED LASER DOPED EMITTERS

Autor:	Eisele, S., Ametowobla, M., Bilger, G., Köhler, J.R., Werner, J.H.
Jazyk:	angličtina
Rok vydání:	2008
Předmět:	Mono- and Multicrystalline Silicon Cells and Materials Processing Technology of Wafer-Based Silicon Solar Cells and Materials Technology
DOI:	10.13140/2.1.3231.9045
Popis:	23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain; 1737-1739 The ipe laser doping process allows for the fabrication of emitters of silicon solar cells via liquid state diffusion of predeposited dopant layers. We have demonstrated that laser doping of sputtered phosphorus precursors results in homogeneous emitters with adjustable sheet resistances from s = 15 Ω/ to 250 Ω/. In this work, the focus lies on the characterization of emitters fabricated with sputtered doping precursors with respect to emitter optimization and understanding the influence of deposition and laser parameters. The calculated open circuit voltage limit Voc,limit > 670 mV, derived from lifetime measurements, shows a high potential for an industrial application.
Databáze:	OpenAIRE
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