Micropipes in SiC Single Crystal Observed by Molten KOH Etching
| Autor: | Xuejian Xie, Yan Peng, Xiufang Chen, Guojie Hu, Xiaobo Hu, Jinying Yu, Xiangang Xu, Hejing Wang |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
SiC
Technology Materials science Scanning electron microscope macromolecular substances Micropipe Article law.invention symbols.namesake Optical microscope stomatognathic system law Etching (microfabrication) General Materials Science Wafer KOH etching Raman Microscopy QC120-168.85 business.industry QH201-278.5 technology industry and agriculture Engineering (General). Civil engineering (General) TK1-9971 Descriptive and experimental mechanics classification of etch pits symbols Optoelectronics micropipes Electrical engineering. Electronics. Nuclear engineering TA1-2040 business Raman spectroscopy Single crystal Raman scattering |
| Zdroj: | Materials Volume 14 Issue 19 Materials, Vol 14, Iss 5890, p 5890 (2021) |
| ISSN: | 1996-1944 |
| DOI: | 10.3390/ma14195890 |
| Popis: | Micropipe, a “killer” defect in SiC crystals, severely hampers the outstanding performance of SiC-based devices. In this paper, the etching behavior of micropipes in 4H-SiC and 6H-SiC wafers was studied using the molten KOH etching method. The spectra of 4H-SiC and 6H-SiC crystals containing micropipes were examined using Raman scattering. A new Raman peak accompanying micropipes located near −784 cm−1 was observed, which may have been induced by polymorphic transformation during the etching process in the area of micropipe etch pits. This feature may provide a new way to distinguish micropipes from other defects. In addition, the preferable etching conditions for distinguishing micropipes from threading screw dislocations (TSDs) was determined using laser confocal microscopy, scanning electron microscopy (SEM) and optical microscopy. Meanwhile, the micropipe etching pits were classified into two types based on their morphology and formation mechanism. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
| Nepřihlášeným uživatelům se plný text nezobrazuje | K zobrazení výsledku je třeba se přihlásit. |