Revisited RF Compact Model of Gate Resistance Suitable for High- $K$/Metal Gate Technology
| Autor: | Francois Danneville, Patrick Scheer, B. Dormieu, C. Charbuillet, H. Jaouen |
|---|---|
| Přispěvatelé: | Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF) |
| Rok vydání: | 2013 |
| Předmět: |
010302 applied physics
Engineering business.industry 020208 electrical & electronic engineering Gate dielectric Electrical engineering Time-dependent gate oxide breakdown Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology 01 natural sciences Electronic Optical and Magnetic Materials Gate oxide Logic gate 0103 physical sciences MOSFET Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Optoelectronics Electrical and Electronic Engineering business Metal gate Gate equivalent Hardware_LOGICDESIGN High-κ dielectric |
| Zdroj: | IEEE Transactions on Electron Devices IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2013, 60, pp.13-19. ⟨10.1109/TED.2012.2225146⟩ IEEE Transactions on Electron Devices, 2013, 60, pp.13-19. ⟨10.1109/TED.2012.2225146⟩ |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2012.2225146 |
| Popis: | State-of-the-art compact models of gate access resistance are investigated and compared with RF measurements for 28-nm high-k/metal gate MOS transistors. This work shows that the usual lumped gate resistance model fails to capture both geometry scaling and voltage dependence observed on silicon. The increasing role of the interface resistance is highlighted, and an improved gate access resistance model is proposed, featuring an encapsulation of the interface resistance component by parasitic capacitances. Theoretical insights and relevance of this new distributed model and associated parameters are also discussed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|