Low Temperature Epitaxy of Si and SiGe Using Disilane Based Chemistry for Electronic Purposes
| Autor: | Jean-Francois Damlencourt |
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| Rok vydání: | 2010 |
| Předmět: | |
| Zdroj: | ECS Transactions. 28:343-348 |
| ISSN: | 1938-6737 1938-5862 |
| DOI: | 10.1149/1.3375620 |
| Popis: | For future CMOS technologies, epilayers such as Si, SiGe and SiC are intensively investigated as candidates for Sources and Drains and channel materials. A low thermal budget and high growth rate is mandatory, mainly for FDSOI applications in order to overcome a Si dewetting phenomenon which occurs at high temperature. In this context, conventional precursors such as Silane (SiH4) and DichloroSilane (SiH2Cl2) are not sufficiently reactive to get high growth rate at low temperature (< 600°C). Due to the lower activation energy for breaking Si-Si bond vs Si-H bond, new precursors, like Trisilane (Si3H8) 4 and Disilane (Si2H6), are promising candidates. In the first part of this paper, we investigate the efficiency of Disilane based Si epitaxy at low temperature. The results obtained are compared to those obtained with conventional chemistry (i.e. SiH4). The growth rate as well as the surface roughness will be addressed. Then, we will discuss on the incorporation of Ge as the function of the growth temperature and the growth rate will be compared to the one obtained with a conventional chemistry. Thin films, either Si or SiGe are epitaxially grown in an industrial ASM epsilon E3200 reduced pressure chemical vapor deposition (RPCVD) reactor on 300mm Si (001) substrates. SiH4 and Si2H6 are used as silicone precursor while the germanium source gas was diluted Germane (10% GeH4 in H2). The Si layer thickness is evaluated by differential weight measurements. The layer thickness is assessed by Atomic Force Microscopy (AFM) on a DI3100 Nanoscope III. Low temperature epitaxial growth of Si layers : The growth rate of Si as a function of the growth temperature for Silane and Disilane chemistry is plotted in figure 1. The partial pressure is remained constant whatever the precursor used is. |
| Databáze: | OpenAIRE |
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