Autor: |
Y. Torimoto, K. Yamashita, Yasuhiro Hayakawa, Masashi Kumagawa, A. Nakayama, K. Asakawa |
Rok vydání: |
1993 |
Předmět: |
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Zdroj: |
Scopus-Elsevier |
ISSN: |
0022-0248 |
DOI: |
10.1016/0022-0248(93)90311-j |
Popis: |
The influence of thermal convection on the morphology of In x Ga 1− x Sb(x = 0.05) layers was investigated by using modified liquid phase epitaxy. A (111) GaSb substrate was inserted vertically into the In-Ga-Sb source solution, and then InGaSb layers were grown in both sides of the substrate. During growth, electric current pulses were passed across the solution-substrate-solution interfaces to introduce impurity markers. The growth morphology obtained by calculating the convective flow agreed well with that obtained experimentally. Therefore, the convection in the source solution was found to affect the growth morphology. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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