SEM characterization of silicon nanostructures: can we meet the challenge?
| Autor: | S. Myhajlenko, C. Tracy, Alec M. Fischer, A. S. Luby, Fernando Ponce |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Materials science
Microscope Silicon business.industry Scanning electron microscope Nanowire chemistry.chemical_element Cathodoluminescence Nanotechnology Atomic and Molecular Physics and Optics Characterization (materials science) law.invention chemistry law Microelectronics business Instrumentation Nanopillar |
| Zdroj: | Scanning. 30:310-316 |
| ISSN: | 1932-8745 0161-0457 |
| DOI: | 10.1002/sca.20115 |
| Popis: | The current semiconductor technology road map for device scaling champions a 4.5 nm gate length in production by 2022. The scanning electron microscope (SEM) as applied to critical dimensions (CD) metrology and associated characterization modes such as electron beam-induced current and cathodoluminescence (CL) has proved to be a workhorse for the semiconductor industry during the microelectronics era. We review some of the challenges facing these techniques in light of the silicon nanotechnology road map. We present some new results using voltage contrast imaging and CL spectroscopy of top-down fabricated silicon nanopillar/nanowires ( |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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