Modeling and Understanding the Compact Performance of h-BN Dual-Gated ReS2 Transistor
| Autor: | Sangwook Lee, Kookjin Lee, Javier Diaz-Fortuny, A. Grill, Ben Kaczer, Jae Woo Lee, Gyu Tae Kim, Adrian Chasin, Erik Bury, Junhee Choi, Dong Hoon Shin, Hyeran Cho, Junhong Na, Jungu Chun, Simon Van Beek |
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| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Materials science
business.industry Transistor field-effect transistors Hexagonal boron nitride Condensed Matter Physics 2D materials Electronic Optical and Magnetic Materials law.invention Dual (category theory) Biomaterials law Electrochemistry Optoelectronics Field-effect transistor hexagonal boron nitride business dual-gate ReS defects |
| Zdroj: | Advanced Functional Materials, 31(23) |
| ISSN: | 1616-301X |
| Popis: | In this study, high-performance few-layered ReS2 field-effect transistors (FETs), fabricated with hexagonal boron nitride (h-BN) as top/bottom dual gate dielectrics, are presented. The performance of h-BN dual gated ReS2 FET having a trade-off of performance parameters is optimized using a compact model from analytical choice maps, which consists of three regions with different electrical characteristics. The bottom h-BN dielectric has almost no defects and provides a physical distance between the traps in the SiO2 and the carriers in the ReS2 channel. Using a compact analyzing model and structural advantages, an excellent and optimized performance is introduced consisting of h-BN dual-gated ReS2 with a high mobility of 46.1 cm2 V−1 s−1, a high current on/off ratio of ≈106, a subthreshold swing of 2.7 V dec−1, and a low effective interface trap density (Nt,eff) of 7.85 × 1010 cm−2 eV−1 at a small operating voltage (2 channel through Y-function method as a function of constant top gate bias. |
| Databáze: | OpenAIRE |
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