Investigation Of A Hybrid Approach For Normally-Off Gan Hemts Using Fluorine Treatment And Recess Etch Techniques
| Autor: | Mustafa Kemal Öztürk, Bayram Butun, Gokhan Kurt, Mehmet Kabak, Sertaç Ural, Ömer Ahmet Kayal, Melisa Ekin Gulseren, Gurur Salkim, Ekmel Ozbay |
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| Přispěvatelé: | Gülseren, Melisa Ekin, Salkım, Gurur, Ural, Sertaç, Kayal, Ömer Ahmet, Öztürk, Mustafa, Bütün, Bayram, Özbay, Ekmel, Kurt, Gökhan |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
recess etch chemistry.chemical_element High-electron-mobility transistor Epitaxy Recess etch Normally-off GaN law.invention law Enhancement-mode Electrical and Electronic Engineering HEMT business.industry Transistor Wide-bandgap semiconductor Normally off Hybrid approach fluorine plasma implantation Fluorine plasma implantation Electronic Optical and Magnetic Materials Threshold voltage chemistry AlGaN Fluorine Optoelectronics lcsh:Electrical engineering. Electronics. Nuclear engineering business enhancement-mode lcsh:TK1-9971 Biotechnology |
| Zdroj: | IEEE Journal of the Electron Devices Society IEEE Journal of the Electron Devices Society, Vol 7, Pp 351-357 (2019) |
| Popis: | A hybrid approach for obtaining normally off high electron mobility transistors (HEMTs) combining fluorine treatment, recess etch techniques, and AlGaN buffer was studied. The effects of process variations (recess etch depth and fluorine treatment duration) and epitaxial differences (AlGaN and carbon doped GaN buffers) on the DC characteristics of the normally off HEMTs were investigated. Two different epitaxial structures and three different process variations were compared. Epitaxial structures prepared with an AlGaN buffer showed a higher threshold voltage ( $V_{\mathrm {th}} = + 3.59 ~\text {V}$ ) than those prepared with a GaN buffer ( $V_{\mathrm {th}} = +1.85 ~\text {V}$ ). |
| Databáze: | OpenAIRE |
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