Modeling of InGaN/Si tandem cells: comparison between 2-contacts/4-contacts
| Autor: | Walid El-Huni, Anne Migan, Zakaria Djebbour, David Alamarguy |
|---|---|
| Přispěvatelé: | Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-CentraleSupélec-Université Pierre et Marie Curie - Paris 6 (UPMC)-Université Paris-Sud - Paris 11 (UP11) |
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
Materials science
Silicon lcsh:TJ807-830 Alloy lcsh:Renewable energy sources chemistry.chemical_element Nanotechnology 02 engineering and technology engineering.material 01 natural sciences 7. Clean energy law.invention law 0103 physical sciences Solar cell Electrical and Electronic Engineering Polarization (electrochemistry) 010302 applied physics Tandem Renewable Energy Sustainability and the Environment business.industry Relaxation (NMR) [SPI.NRJ]Engineering Sciences [physics]/Electric power 021001 nanoscience & nanotechnology Condensed Matter Physics Electronic Optical and Magnetic Materials [SPI.TRON]Engineering Sciences [physics]/Electronics chemistry engineering [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] Optoelectronics 0210 nano-technology business Layer (electronics) Indium |
| Zdroj: | EPJ Photovoltaics EPJ Photovoltaics, 2017, 8, ⟨10.1051/epjpv/2017003⟩ EPJ Photovoltaics, EDP sciences, 2017, 8, ⟨10.1051/epjpv/2017003⟩ EPJ Photovoltaics, Vol 8, p 85502 (2017) |
| ISSN: | 2105-0716 |
| DOI: | 10.1051/epjpv/2017003⟩ |
| Popis: | International audience; Due to its electrical and optical interesting properties, InGaN alloy is being intensively studied to be combined with silicon in order to achieve low-cost high-efficiency solar cell. However, a relatively thick monophasic layer of InGaN is difficult to grow due to the relaxation issue in material. This issue can be avoided by semibulk structure. In this work, we present an InGaN/Si double-junction solar cell modeled using Silvaco-ATLAS TCAD software. We have taken into account polarization effect in III-N materials. We have shown that 50% of indium is needed to ensure the current matching between the top cell and the bottom cell in 2-terminal configuration. Such high indium composition is technologically challenging to grow. Thus, we have modeled a 4-terminals solar cell with relatively low indium composition (In = 25%) where current matching is not needed. With technologically feasible structural parameters, we have shown that an efficiency near to 30% can be achieved with InGaN/Si 4-contact tandem cell. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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