Total-Ionizing-Dose Effects in InGaAs MOSFETs With High-k Gate Dielectrics and InP Substrates
| Autor: | Simone Gerardin, Stefano Bonaldo, Dimitri Linten, Robert A. Reed, Ronald D. Schrimpf, Bertrand Parvais, Daniel M. Fleetwood, Simeng E. Zhao, En Xia Zhang, V. Putcha, Alessandro Paccagnella |
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| Přispěvatelé: | Electronics and Informatics, Electricity |
| Rok vydání: | 2020 |
| Předmět: |
Nuclear and High Energy Physics
Materials science Bias dependence Gate dielectric Dielectric 01 natural sciences MOSFET chemistry.chemical_compound Gate oxide InP substrate 0103 physical sciences high-k dielectric Electrical and Electronic Engineering indium gallium arsenide (InGaAs) High-κ dielectric threshold voltage shift III V Condensed matter physics 010308 nuclear & particles physics Subthreshold conduction channel length dependence total dose effects Threshold voltage Nuclear Energy and Engineering chemistry Indium gallium arsenide |
| Zdroj: | IEEE Transactions on Nuclear Science. 67:1312-1319 |
| ISSN: | 1558-1578 0018-9499 |
| Popis: | The total-ionizing-dose (TID) response of indium gallium arsenide (InGaAs) MOSFETs with Al2O3 gate dielectrics and several channel lengths is evaluated under different biases. DC static characteristics show large negative threshold voltage $V_{\text {th}}$ shifts and subthreshold stretchout ( SS ), indicating net positive charge trapping in the gate oxide and generation of the interface and border traps. Hysteresis and $I_{d}$ – $V_{\text {gs}}$ measurements from cryogenic to high temperatures show the important role of defects in the Al2O3 gate dielectric to the TID response. Radiation-induced-hole trapping is attributed to oxygen vacancies in the Al2O3. The relatively large hysteresis in these devices is attributed primarily to dangling Al bonds in the near-interfacial Al2O3. Analysis of the temperature dependence of $V_{\text {th}}$ and SS suggests that the rate at which electrons leave the Al2O3 during a positive-to-negative gate-bias sweep is higher than the rate at which they enter during a negative-to-positive gate-bias sweep. |
| Databáze: | OpenAIRE |
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