Fabrication and Characterization of AlGaN-Based UV LEDs with a ITO/Ga2O3/Ag/Ga2O3 Transparent Conductive Electrode
| Autor: | Rulian Wen, Quanbin Zhou, Siwei Liang, Hong Wang |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Fabrication Annealing (metallurgy) General Chemical Engineering Ga2O3 02 engineering and technology medicine.disease_cause 01 natural sciences Article law.invention lcsh:Chemistry transparent conductive electrode transmittance law 0103 physical sciences medicine Transmittance General Materials Science Sheet resistance 010302 applied physics business.industry Contact resistance 021001 nanoscience & nanotechnology AlGaN-based ultraviolet light-emitting diode lcsh:QD1-999 Electrode Optoelectronics 0210 nano-technology business sheet resistance Ultraviolet Light-emitting diode |
| Zdroj: | Nanomaterials Volume 9 Issue 1 Nanomaterials, Vol 9, Iss 1, p 66 (2019) |
| ISSN: | 2079-4991 |
| DOI: | 10.3390/nano9010066 |
| Popis: | We fabricated a complex transparent conductive electrode (TCE) based on Ga2O3 for AlGaN-based ultraviolet light-emitting diodes. The complex TCE consists of a 10 nm ITO, a 15 nm Ga2O3, a 7 nm Ag, and a 15 nm Ga2O3, forming a ITO/Ga2O3/Ag/Ga2O3 multilayer. The metal layer embedded into Ga2O3 and the thin ITO contact layer improves current spreading and electrode contact properties. It is found that the ITO/Ga2O3/Ag/Ga2O3 multilayer can reach a 92.8% transmittance at 365 nm and a specific contact resistance of 10&minus 3 &Omega · cm2 with suitable annealing conditions. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|