Progress in InGaAs-GaAs selective-area MOCVD toward photonic integrated circuits
| Autor: | Mark L. Osowski, A.M. Jones, Robert M. Lammert, James J. Coleman |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Materials science
business.industry Photonic integrated circuit Physics::Optics Laser Atomic and Molecular Physics and Optics Semiconductor laser theory Gallium arsenide law.invention chemistry.chemical_compound chemistry law Optoelectronics Metalorganic vapour phase epitaxy Electrical and Electronic Engineering Photonics business Diode Photonic crystal |
| Zdroj: | ResearcherID |
| ISSN: | 1077-260X |
| DOI: | 10.1109/2944.640641 |
| Popis: | The progress toward integrated photonic devices by selective-area metalorganic chemical vapor deposition (MOCVD) is reviewed. Processing steps involved with fabricating buried heterostructures (BHs) by a three-step technique are outlined, and a computational model is presented that predicts the enhancement behavior of selective-area MOCVD. Results are reviewed for several discrete and integrated photonic devices. These include low-threshold BH lasers, laser diodes integrated with either intracavity or external cavity modulators, dual-channel emitters integrated with both modulators and passive y-junction waveguides, and broad-band light-emitting diodes (LEDs). |
| Databáze: | OpenAIRE |
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