A Semi-Floating Gate Memory with Tensile Stress for Enhanced Performance
| Autor: | Bingqi Sun, Ying Yuan, Lin Chen, Shuye Jiang, Qing-Qing Sun, Hao Zhu, David Wei Zhang |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
retention
Materials science Computer Networks and Communications semi-floating gate transistor lcsh:TK7800-8360 Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology 01 natural sciences tensive strain law.invention Hardware_GENERAL law 0103 physical sciences Hardware_INTEGRATEDCIRCUITS Electrical and Electronic Engineering Scaling disturbance 010302 applied physics Dynamic random-access memory business.industry lcsh:Electronics Transistor 021001 nanoscience & nanotechnology Capacitor Hardware and Architecture Control and Systems Engineering contact etch stop layer Signal Processing Optoelectronics 0210 nano-technology business Ultrashort pulse Dram Voltage Communication channel |
| Zdroj: | Electronics, Vol 8, Iss 4, p 414 (2019) Electronics Volume 8 Issue 4 |
| ISSN: | 2079-9292 |
| DOI: | 10.3390/electronics8040414 |
| Popis: | With the continuous scaling down of devices, traditional one-transistor one-capacitor dynamic random access memory (1T-1C DRAM) has encountered great challenges originated from the large-volume capacitor and high leakage current. A semi-floating gate transistor has been proposed as a capacitor-less memory with ultrafast speed and silicon-compatible technology. In this work, a U-shaped semi-floating gate memory with strain technology has been demonstrated through TCAD simulation. Ultra-high operation speed on a timescale of 5 ns at low operation voltages (&le 2.0 V) has been obtained. And the tensile stress induced in its channel region by using contact etch stop layer (Si3N4 capper layer) was found to significantly improve the drain current by 12.07%. Furthermore, this device demonstrated a favorable retention performance with a retention time over 1 s, and its immunity to disturbance from bit-line has also been investigated that could maintain data under the continuous worst writing disturbance operation over 10 ms. |
| Databáze: | OpenAIRE |
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