Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy
| Autor: | J.H. Blokland, M Murat Bozkurt, Jan C. Maan, Pcm Christianen, JM José Maria Ulloa, Dirk Reuter, Andreas D. Wieck, PM Paul Koenraad |
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| Přispěvatelé: | Photonics and Semiconductor Nanophysics, Semiconductor Nanostructures and Impurities |
| Jazyk: | angličtina |
| Rok vydání: | 2009 |
| Předmět: |
Photoluminescence
Materials science Physics and Astronomy (miscellaneous) Condensed matter physics Relaxation (NMR) Quantum point contact chemistry.chemical_element Scanning gate microscopy Correlated Electron Systems / High Field Magnet Laboratory (HFML) Condensed Matter::Mesoscopic Systems and Quantum Hall Effect law.invention Condensed Matter::Materials Science Lattice constant chemistry Quantum dot law Scanning tunneling microscope GeneralLiterature_REFERENCE(e.g. dictionaries encyclopedias glossaries) Indium |
| Zdroj: | Applied Physics Letters, 94(2):023107, 023107-1/3. American Institute of Physics Applied Physics Letters, 94, pp. 023107-1-023107-3 Applied Physics Letters, 94, 023107-1-023107-3 |
| ISSN: | 0003-6951 |
| Popis: | We report a detailed analysis of the shape, size, and composition of self-assembled InAs quantum dots based on cross-sectional scanning tunneling microscopy (X-STM) experiments. X-STM measurements on 13 individual quantum dots reveal an ellipsoidal dot shape with an average height of 8 nm and a diameter of 26 nm. Analysis of the outward relaxation and lattice constant profiles shows that the dots consist of an InGaAs alloy with a profound gradient in the indium concentration in both horizontal and vertical directions. These results are important to obtain a deeper understanding of the relationship between the structural and electronic properties of semiconductor quantum dots. |
| Databáze: | OpenAIRE |
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