Megaelectronvolt implants into GaAs using a hot-cathode penning ion source

Autor:	Russell M. Gwilliam, J.E. Mynard, N. J. Whitehead, B.J. Sealy, M. Ma, R.T. Blunt
Rok vydání:	1989
Předmět:	Materials science Silicon Annealing (metallurgy) Mechanical Engineering chemistry.chemical_element Hot cathode Condensed Matter Physics Ion source law.invention chemistry Mechanics of Materials law General Materials Science Atomic physics
Zdroj:	Scopus-Elsevier
ISSN:	0921-5107
DOI:	10.1016/0921-5107(89)90105-0
Popis:	Carrier concentration and mobility profiles as a function of annealing time and temperature are reported for megaelectronvolt silicon implants into GaAs. Atomic profiles show the implant profile shape to be of the Pearson IV type. The results obtained from a new design of Penning ion source are also presented.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b50d802ee43eaaeb213421c8a3f7f92 https://doi.org/10.1016/0921-5107(89)90105-0 Zobrazit plný text záznamu