Step-Flow Growth of Fluorescent 4H-SiC Layers on 4 Degree Off-Axis Substrates
| Autor: | Saskia Schimmel, Mikael Syväjärvi, Haiyan Ou, Margareta K. Linnarsson, Philip Hens, Peter J. Wellmann, Yiyu Ou, Rickard Liljedahl, Valdas Jakubavicius, Michl Kaiser, Rositza Yakimova, Jianwu Sun |
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| Rok vydání: | 2013 |
| Předmět: |
Range (particle radiation)
Materials science business.industry Mechanical Engineering chemistry.chemical_element Green-light Condensed Matter Physics Nitrogen Fluorescence Degree (temperature) chemistry Mechanics of Materials Optoelectronics General Materials Science business Luminescence Boron Diode |
| Zdroj: | Schimmel, S, Kaiser, M, Hens, P, Jokubavicus, V, Liljedahl, R, Sun, J W, Yakimova, R, Ou, Y, Ou, H, Linnarsson, M K, Wellmann, P & Syväjärvi, M 2012, ' Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates ', European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), Saint-Petersburg, Russian Federation, 02/09/2012-06/09/2012 . Technical University of Denmark Orbit |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.740-742.185 |
| Popis: | Homoepitaxial layers of fluorescent 4H-SiC were grown on 4 degree off-axis substrates by sublimation epitaxy. Luminescence in the green spectral range was obtained by co-doping with nitrogen and boron utilizing donor-acceptor pair luminescence. This concept opens possibilities to explore green light emitting diodes using a new materials platform. |
| Databáze: | OpenAIRE |
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