Correlating Defect Density with Growth Time in Continuous Graphene Films
| Autor: | Jin Seok Lee, Cheong Kang, Dahee Jung, Ji Eun Nam |
|---|---|
| Rok vydání: | 2014 |
| Předmět: |
Materials science
Graphene Annealing (metallurgy) Biomedical Engineering Bioengineering Nanotechnology General Chemistry Condensed Matter Physics Growth time law.invention Atmospheric pressure chemical vapor deposition Graphene monolayer Reaction temperature Chemical engineering Average size law General Materials Science Growth rate |
| Zdroj: | Journal of Nanoscience and Nanotechnology. 14:9169-9173 |
| ISSN: | 1533-4899 1533-4880 |
| DOI: | 10.1166/jnn.2014.10097 |
| Popis: | We report that graphene flakes and films which were synthesized by copper-catalyzed atmospheric pressure chemical vapor deposition (APCVD) method using a mixture of Ar, H2, and CH4 gases. It was found that variations in the reaction parameters, such as reaction temperature, annealing time, and growth time, influenced the domain size of as-grown graphene. Besides, the reaction parameters influenced the number of layers, degree of defects and uniformity of the graphene films. The increase in growth temperature and annealing time tends to accelerate the graphene growth rate and increase the diffusion length, respectively, thereby increasing the average size of graphene domains. In addition, we confirmed that the number of pinholes reduced with increase in the growth time. Micro-Raman analysis of the as-grown graphene films confirmed that the continuous graphene monolayer film with low defects and high uniformity could be obtained with prolonged reaction time, under the appropriate annealing time and growth temperature. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|